Chemical-mechanical polishing for shallow trench isolation

Details Chemical-mechanical polishing for shallow trench isolation Chemical-mechanical polishing for shallow trench isolation

1998-05-11

1999-09-28

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438691, 438693, 438695, 438697, H01L 21463

Patent

active

059587954

ABSTRACT:
A method of chemical-mechanical polishing for forming a shallow trench isolation. A substrate having a plurality of active regions, including a large active region and a small active region, is provided. A silicon nitride layer is formed on the substrate. A shallow trench is formed between the active regions. An oxide layer is formed over the substrate, so that the shallow trench is filled therewith. A partial reverse active mask is formed on the oxide layer, so that the oxide layer on a central part of the large active region is exposed. Whereas, the oxide layer on an edge part of the large active region and on the small active region are covered by the partial reverse active mask. The oxide layer is etched with the silicon nitride layer as a stop layer, using the partial reverse active mask as a mask. The oxide layer is planarized until the oxide layer within the shallow trench has a same level as the silicon nitride layer.

REFERENCES:
patent: 5792707 (1998-08-01), Chung
patent: 5837612 (1998-11-01), Ajuria et al.
patent: 5854133 (1998-12-01), Hachiya et al.
patent: 5858842 (1999-01-01), Park

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