Pattern forming method using phase shift mask

Details Pattern forming method using phase shift mask Pattern forming method using phase shift mask

1996-12-16

1999-09-28

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

430396, G03F 720

Patent

active

059586567

ABSTRACT:
A prescribed region of a photoresist is subjected to first exposure, second exposure, and thereafter to development. Different phase shift masks are used at the time of the first exposure and the second exposure, respectively. Each phase shift mask has a light shielding film located between two light transmitting portions for respectively transmitting light with a phase difference of 180.degree.. Thus, a pattern forming method using a phase shift mask, which allows formation of small hole patterns even with the exposure light being slightly defocused in the case of forming hole dense patterns such as those in a memory device, can be provided.

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