Method for the manufacture of semiconductor devices with planar

Details Method for the manufacture of semiconductor devices with planar Method for the manufacture of semiconductor devices with planar

1985-08-21

1987-05-26

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 148DIG10, 357 20, 357 91, 357 238, H01L 2978

Patent

active

046673938

ABSTRACT:
The invention relates to a method for the manufacture of high voltage semiconductor devices with at least one planar junction with a variable charge concentration.
The method consists in doping with impurities of a same type, in a region of monocrystalline semiconductor material, a first zone, and then a second zone which comprises the first, and so on, and in carrying out a subsequent heat treatment so as to provide a planar junction with a stepped profile and a concentration of impurities which decreases from the center to the periphery in a predetemined range. In this way the intensity of the surface electric field, when the junction is reverse biased, is reduced as a result of which it is possible to provide planar junctions having very high breakdown voltages of some thousands of volts.

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