Solar cell with a gallium nitride electrode

Details Solar cell with a gallium nitride electrode Solar cell with a gallium nitride electrode

1977-12-12

1979-02-13

Edlow, Martin H.

357 61, 357 65, H01H 2714

Patent

active

041398580

ABSTRACT:
A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

REFERENCES:
patent: 3649838 (1972-03-01), Phelan, Jr.
patent: 3683240 (1972-08-01), Pankove
patent: 3877058 (1975-04-01), Cricchi
patent: 3922703 (1975-11-01), Pankove
patent: 4028720 (1977-06-01), Pankove
Pankove, Journal of Luminescence, 7(1973) pp. 114-126.
Pankove, R.C.A. Review, 34, Jun. 1973, pp. 336-343.
Maruska et al., Mat. Res. Bull. vol. 7, No. 8, pp. 777-782 (1972).
Maruska et al. Solid State Electronics, vol. 17, 1974, pp. 1171-1179.

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