Semiconductor device contains refractory metal or metal silicide

Details Semiconductor device contains refractory metal or metal silicide Semiconductor device contains refractory metal or metal silicide

1996-01-24

1998-11-03

Writehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257753, 257758, 257761, 257763, 257764, 257767, 257768, 257769, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

058313354

ABSTRACT:
A semiconductor device comprising a silicon-series material layer and a laminate structure formed on the silicon-series material layer, the laminate structure being composed of a refractory metal thin film and/or a refractory metal silicide thin film, wherein a content of a halogen atom in each of the refractory metal thin film and/or the refractory metal silicide thin film is 1% by weight or less based on an amount of each of the refractory metal thin film and/or the refractory metal silicide thin film. In accordance with the present invention, there is also provided a process of producing such a semiconductor device.

Affiliated with

Also associated with

Rating

Semiconductor device contains refractory metal or metal silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device contains refractory metal or metal silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device contains refractory metal or metal silicide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-692603