Semiconductor device and manufacturing method of the device

Details Semiconductor device and manufacturing method of the device Semiconductor device and manufacturing method of the device

1997-07-09

1998-11-03

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257588, 257755, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

058313281

ABSTRACT:
A semiconductor device in which at least one IIL transistor is formed, the semiconductor device having, a base region (6) provided against a semiconductor substrate (1), a plurality of collector regions (9) formed in the base region (6), each of the collector regions (9) aligning in a direction parallel to a spreading surface of the semiconductor substrate (1), and a metal wiring having a plurality of contact portions (10), each of the contact portions being connected electrically to predetermined one of the collector regions (9), characterized in that, each of the contact portions of the metal wiring (10) is connected electrically to the collector region (9) corresponding thereto via a polysilicon cap (11) formed so as to cover the collector region (9).

REFERENCES:
patent: 4140922 (1979-02-01), Mueller
patent: 4980304 (1990-12-01), Chin et al.
patent: 5241203 (1993-08-01), Hsu et al.
patent: 5296729 (1994-03-01), Yamanaka et al.

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