Semiconductor thyristor switching device and power converter usi

Details Semiconductor thyristor switching device and power converter usi Semiconductor thyristor switching device and power converter usi

1996-09-06

1998-11-03

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257149, 257152, 257153, H01L 2974, H01L 31111

Patent

active

058312935

ABSTRACT:
There is provided a semiconductor substrate which includes a pair of main surfaces, a first semiconductor layer of a first conductivity type adjacent to one of the main surface, a second semiconductor layer of a second conducting type of which impurity concentration is lower than that of the first semiconductor layer and which is adjacent to the first semiconductivity, a third semiconductor layer of the first conductivity type adjacent to the second semiconductor, and a fourth semiconductor of the second conductivity type of which impurity concentration is higher than that of the third semiconductor and which is adjacent to the other of the main surfaces and the third semiconductor. The device further includes one main electrode in ohmic-contact with the first semiconductor layer on one of the main surfaces of said semiconductor substrate, the other main electrode in ohmic-contact with the first semiconductor layer on the other of the main surfaces of said semiconductor substrate, and a control electrode connected electrically to the third semiconductor layer. The total amount of impurities of said third semiconductor layer is less than 10.sup.14 cm.sup.-2.

REFERENCES:
patent: 4170502 (1979-10-01), Watakabe
patent: 5324967 (1994-06-01), Honma et al.
patent: 5336907 (1994-08-01), Nakanishi et al.
The Sixth SI Device Symposium (Jan. 1993), SID-92-(1)-1, pp. 1-6.

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