Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-12-04
1998-09-29
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 65, 257 66, 257 71, 257 72, 257347, 257354, H01L 31036, H01L 2904, H01L 2701
Patent
active
058148345
ABSTRACT:
A thin film semiconductor device includes a thin film semiconductor, a gate insulating film, and a gate electrode. The thin film semiconductor includes a source region of a first conductivity type connected to a source electrode/wiring, a drain region of the first conductivity connected to a drain electrode/wiring, a base region being intrinsic or having a conductivity type opposite to the first conductivity and disposed between the source region and the drain region, and a floating island region having the first conductivity type and divided from the source region and the drain region by the base region. The gate electrode is provided upper or under the base region through the gate insulating film. According to such a structure, an ON/OFF ratio of the thin film semiconductor device can be increased.
REFERENCES:
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5656824 (1997-08-01), Den Boer et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
Koyama Jun
Takemura Yasuhiko
Yamazaki Shunpei
Semiconductor Energy Laboratory Co.
Wallace Valencia
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