Solid-state imaging device of a vertical overflow drain system

Details Solid-state imaging device of a vertical overflow drain system Solid-state imaging device of a vertical overflow drain system

1997-06-11

1999-04-27

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257229, 257230, 257445, 257461, H01L 27148

Patent

active

058981950

ABSTRACT:
A solid-state imaging device of a vertical overflow drain system according to the present invention includes a first conductive type semiconductor substrate, a second conductive type semiconductor well region formed on the first conductive type semiconductor substrate, and a first conductive type, second conductive type or intrinsic high-resistance semiconductor region formed on the second conductive semiconductor well region and having a lower concentration as compared with the second conductive semiconductor well region and a width enough for infrared ray to be sufficiently absorbed. A light receiving portion is formed on a surface of the first conductive type, second conductive type or intrinsic high-resistance semiconductor region.

REFERENCES:
patent: 5404039 (1995-04-01), Watanabe

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