Pressurized contact type double gate static induction thyristor

Details Pressurized contact type double gate static induction thyristor Pressurized contact type double gate static induction thyristor

1986-03-13

1987-06-16

Clawson, Jr., Joseph E.

357 38, 357 56, 357 72, 357 74, 357 79, 357 81, H01L 2980

Patent

active

046739610

ABSTRACT:
A pressurized contact type double gate static induction thyristor comprising a semiconductor body located in a casing and having cathode electrodes and a first gate electrode at one principal surface side thereof and anode electrodes and a second gate electrode at the other principal surface side thereof. A first thermal expansion stress buffer plate is located in the casing to be in contact with the cathode electrode, and a second thermal expansion stress buffer plate is located at the other principal surface side of the semiconductor body. This second plate is composed of at least two metal members electrically insulated from each other and integrally bonded by an insulating material, one of the two metal members being in contact with the anode electrode and the other metal member being in contact with the second gate electrode.

REFERENCES:
patent: 4402004 (1983-08-01), Iwasaki

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