Sense amplifier for CMOS semiconductor memory devices having sym

Details Sense amplifier for CMOS semiconductor memory devices having sym Sense amplifier for CMOS semiconductor memory devices having sym

1984-08-02

1987-01-06

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307451, 307579, 307303, H03K 17687

Patent

active

046349014

ABSTRACT:
A sense amplifier circuit for a CMOS DRAM or the like uses cross-coupled P-channel load transistors and cross-coupled N-channel driver transistors. Both of the P-channel transistors are in an N-well in the center of a symmetrical layout on the chip. Each N-channel transistor is split into two separate transistors, one on each side of the N-well, so that a balanced configuration is possible.

REFERENCES:
patent: 4003035 (1977-01-01), Hoffman et al.
patent: 4139911 (1979-02-01), Sciulli et al.
patent: 4286178 (1981-08-01), Rao et al.
patent: 4479202 (1984-10-01), Uchida
patent: 4506349 (1985-03-01), Mazin et al.
patent: 4545037 (1985-10-01), Nakano et al.

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