Method of doping with beryllium and method of fabricating semico

Details Method of doping with beryllium and method of fabricating semico Method of doping with beryllium and method of fabricating semico

1995-08-03

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 41, 438 45, 438681, H01L 2100

Patent

active

058145346

ABSTRACT:
In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP).sub.2 Be is employed as a dopant source. Since (MeCP).sub.2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP).sub.2 Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized.

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