Mask data generating method and mask for an electron beam exposu

Details Mask data generating method and mask for an electron beam exposu Mask data generating method and mask for an electron beam exposu

1997-06-27

1999-04-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, G03F 900

Patent

active

058979786

ABSTRACT:
In accordance with the present invention, repeated patterns are produced beforehand without dividing patterns included in design pattern data. The repeated pattern data are used to produce a mask for partial full electron beam exposure. This insures a resist pattern free from connection errors on the boundaries between the repeated pattern areas. The invention therefore obviates connection errors of about 0.02 .mu.m to 0.03 .mu.m heretofore occurring at each time of a partial simultaneous electron beam shot, and thereby enhances the dimensional accuracy of a resist pattern produced by electron beam exposure.

REFERENCES:
patent: 5334282 (1994-08-01), Nakayama et al.
patent: 5624774 (1997-04-01), Okino et al.
patent: 5650250 (1997-07-01), Moon
patent: 5705299 (1998-01-01), Tew et al.
"High Throughput Electron Beam Lithography System", Hitachi Review, vol. 76, No. 7 (1994-11).

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