Phase shift mask for formation of contact holes having micro dim

Details Phase shift mask for formation of contact holes having micro dim Phase shift mask for formation of contact holes having micro dim

1995-11-28

1999-04-27

Angebranndt, Martin

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, G03F 900

Patent

active

058979751

ABSTRACT:
A phase shift mask capable of forming contact holes having a micro dimension smaller than the wavelength of exposure light while being spaced at small intervals. The phase shift mask includes a quartz substrate, a chromium pattern formed on the quartz substrate along a peripheral edge of the quartz substrate, and a plurality of uniformly spaced phase shift layer patterns formed on a portion of the quartz substrate not covered with the chromium pattern, each of the phase shift layer patterns having a desired size. Each of the phase shift layer patterns has a line width larger than the wavelength of a light source used in a light exposure procedure.

REFERENCES:
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5316896 (1994-05-01), Fukuda et al.
patent: 5364716 (1994-11-01), Nakagawa et al.
patent: 5415952 (1995-05-01), Haruki et al.
patent: 5458999 (1995-10-01), Szabo et al.
patent: 5573634 (1996-11-01), Ham
patent: 5605775 (1997-02-01), Watanabe

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