Method for fabricating a semiconductor with a photomask

Details Method for fabricating a semiconductor with a photomask Method for fabricating a semiconductor with a photomask

1995-03-07

1997-09-09

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, G03F 900

Patent

active

056654952

ABSTRACT:
A photomask is fabricated by forming a scribe line at the four sides of a product die pattern and forming vernier patterns at four corners. The vernier pattern is formed of a regular square area and a regular square band-shaped area. A reticle rotation error of an exposer, X and Y-axis stepping error, a bending error of the lens and a pattern error formed on the wafer due to the fabricating error of the photomask can be found by developing the overlapped vernier patterns which are exposed several times using the photomask.

REFERENCES:
patent: 5017514 (1991-05-01), Nashimoto
patent: 5262258 (1993-11-01), Yanagisawa
patent: 5498500 (1996-03-01), Bae

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