Method of fabricating a dynamic random access memory capacitor

Details Method of fabricating a dynamic random access memory capacitor Method of fabricating a dynamic random access memory capacitor

1998-11-25

2000-02-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, H01L 2120

Patent

active

060308788

ABSTRACT:
A method of fabricating a capacitor includes formation of a first dielectric layer having a contact hole on a substrate. A conductive layer is formed over the substrate and is electrically coupled with a source/drain region through the contact hole. An isolation layer is formed on the conductive layer. The isolation layer and the conductive layer are patterned to form a patterned isolation layer and a raised region over the contact hole. A first spacer is formed on the sidewall of the patterned isolation layer and the raised region. The patterned isolation layer is removed. The first spacer is used as a mask to etch the conductive layer to form another two sidewalls. The first spacer is removed. Two spacers are formed on the two sidewalls and used as masks. The conductive layer is patterned again to form two raised regions concentrically in shape.

REFERENCES:
patent: 5330614 (1994-07-01), Ahn
patent: 5399518 (1995-03-01), Sim et al.
patent: 5438013 (1995-08-01), Kim et al.
patent: 5444005 (1995-08-01), Kim et al.
patent: 5712202 (1998-01-01), Liaw et al.

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