Interconnection forming method

Details Interconnection forming method Interconnection forming method

1992-08-20

1997-02-04

Fourson, George

Fishing, trapping, and vermin destroying

437197, 437198, 437199, 437245, 437229, 1566431, 1566461, H01L 21467

Patent

active

055997422

ABSTRACT:
A method of forming interconnectors involves the passivation (surface protective) of aluminum interconnector patterns and connection hole surfaces without objectionable particle level problems. Under electrical discharge disassociation conditions, sulphur (S) is liberated and permits the formation of an anti-corrosive polythiazyl in a plasma generated by using gaseous sulphur and nitrogen containing compounds. For example, in order to prevent the exposure of an aluminum interconnector material layer to atmospheric air after it has been resist masked and etched, plasma CVD is used with a gas containing a mixture of S.sub.2 F.sub.2 /H.sub.2 /N.sub.2, to form a protective film on the surfaces of the pattern. In this coated condition, after corrosion is prevented until such time as the next fabrication step which forms an interlayer insulation membrane is carried out. The protective film can be removed by heating the wafer to about 150.degree. C. at which time the protective film readily sublimes or decomposes. Other application come in that, after a natural oxide film is removed from a contact hole surface, until an upper interconnector is formed, the above mentioned protective film is temporarily formed over the exposed surfaces to prevent the reformation of the natural oxide film.

REFERENCES:
patent: 4208241 (1980-06-01), Harshbarger et al.
patent: 4622285 (1986-11-01), Ahne
patent: 5314576 (1994-05-01), Kadomura
patent: 5326431 (1994-07-01), Kadomura
Mikulski et al, "Synthesis and Structure of Metallic Polymeric Sulfur Nitride, (SN).sub.x, and Its Precursor, Disulfur Dinitride, S.sub.2 N.sub.2 ", Journal of the American Chemical Society, Oct. 29, 1975, pp. 6358-6363.
Yoshino et al, "Formation of Semiconductive Metal-Sulfide at Interface of (SN).sub.x -Metal Junction", Japanese Journal of Applied Physics, vol. 21, No. 8, Aug. 1982, pp. L507-L508.
Mikulski et al, "Synthesis and Structure of Metallic Polymeric Sulfur Nitride, (SN).sub.x, and Its Precursor, Disulfur Dinitride, S.sub.2 N.sub.2 ", Journal of the American Chemical Society, vol. 97, No. 22, Oct. 29, 1975, pp. 6358-6363.
Semiconductor World, Apr. 1989, pp. 101-106. (Author & Title not provided).
Semiconductor World, Sep. 1990, pp. 126-130. (Author & Title not provided).
Semiconductor World, Oct. 1990, pp. 44-49. (Author & Title not provided).
34th Applied Physics Related League Lecture Meeting (1987 Annual Spring Meeting), vol. 2, p. 460, "Suggestion of Si Surface Anti-Oxidized Layer for Dry Process" E. Ikawa, et al.
Abstract of Japanese Published Application 5047720 of Feb. 26, 1993, Patent Abstracts of Japan, vol. 017, No. 340 [E1389] Jun. 28, 1993.
Abstract 582, Hara et al "Surface Cleaning for SiH.sub.4 -Reduced Selective Tungsten", Extended Abstracts Fall Meeting, Seattle, Washington, Oct. 14-19, 1990, vol. 90, No. 2, pp. 842-843.

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