Monocrystal growing method

Details Monocrystal growing method Monocrystal growing method

1993-01-14

1994-11-29

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, C30B 1530

Patent

active

053679792

ABSTRACT:
In a method of growing a monocrystalline silicon based on the Czochralski method, the thermal Rossby number is set to at least 80 to develop the convection of a liquid of melted silicon in an axially symmetric form. A tube made of quartz is inserted in the silicon liquid to supply oxygen thereto to control the oxygen density of a resultant crystal. According to this method, there can be grown a silicon monocrystal which contains oxygen in an arbitrary density range from 10.sup.15 /cm.sup.3 to 10.sup.18 /cm.sup.3 and which has a uniform oxygen density variation not exceeding 5% in a plane vertical to a direction of the crystal growth.

REFERENCES:
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patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 5131974 (1992-07-01), Oda et al.
"Influence of vertical stratification on motion in a differentially heated rotating annulus"; Boubnov, et al; Geophysical and Astrophysical Fluid Dynamics; (1988); vol. 42, No. 1-2, pp. 1-351.

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