Method of forming a field oxide film in a semiconductor device

Details Method of forming a field oxide film in a semiconductor device Method of forming a field oxide film in a semiconductor device

1995-07-06

1997-02-04

Dang, Trung

Fishing, trapping, and vermin destroying

437 69, 437 72, 437 73, H01L 2176

Patent

active

055997317

ABSTRACT:
The present invention discloses a method of forming a field oxide film in a semiconductor device which can minimize an occurrence of a birds beak by forming a pad polysilicon film between a nitride film and a pad oxide film, defining field regions by patterning the nitride film, and forming an oxidization prevention layer by implanting nitrogen atoms into portions where the bird's beak will otherwise occur.

REFERENCES:
patent: 4407696 (1983-10-01), Han
patent: 5308787 (1994-05-01), Hong et al.

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