Poly-buffered LOCOS

Details Poly-buffered LOCOS Poly-buffered LOCOS

1994-12-08

1997-02-04

Fourson, George

Fishing, trapping, and vermin destroying

437984, H01L 2176

Patent

active

055997309

ABSTRACT:
A method of field oxide formation which creates field oxides of comparatively uniform height between differently-spaced oxidation masks is disclosed. A patterned oxidation mask, typically silicon nitride, (possibly with underlying polysilicon) is formed. A blanket layer of polysilicon is formed and etched back, thereby filling spaces between closely-spaced portions of the oxidation mask and fillets between less-closely spaced portions. A thermal oxidation is performed to produce a field oxide. The field oxide has comparatively uniform height despite differences in oxidation mask spacing.

REFERENCES:
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 5326715 (1994-07-01), Jang et al.
Park, T., "A Novel LOCOS-Type Isolation Free from the Field Oxide Thinning Effect", Extended Abstracts of the 1993 Int'l Conf. on Solid State Devices & Materials, Mukuhari, 1993, pp. 528-530.

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