SOI semiconductor device and method of producing same wherein wa

Details SOI semiconductor device and method of producing same wherein wa SOI semiconductor device and method of producing same wherein wa

1994-11-23

1997-02-04

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 62, 437241, H01L 21265, H01L 2102, H01L 21302, H01L 2176

Patent

active

055997228

ABSTRACT:
A trench isolation junction type SOI semiconductor device which reduces substrate warpage while suppressing increase in production steps and a method for producing the same are disclosed. A junction substrate is formed by bonding a semiconductor substrate having an outer insulation film on a non-junction main surface with a semiconductor layer with an inner insulation film sandwiched therebetween. After forming a silicon nitride film as a mask for the purpose of forming a trench in the semiconductor layer, silicon nitride film accumulated on the outer insulation film is removed. By doing this, warpage of the semiconductor substrate due to discrepancies in the thermal expansion rates of the rigid silicon nitride film and semiconductor substrate can be prevented. In a junction type SOI semiconductor device formed via the method, an outer insulation film of identical thickness and identical density to an inner insulation film is formed on a non-junction main surface (i.e., rear surface) of a semiconductor substrate. By doing this, warpage of the semiconductor substrate can be prevented.

REFERENCES:
patent: 5296385 (1994-03-01), Moslehi et al.

Affiliated with

Also associated with

Rating

SOI semiconductor device and method of producing same wherein wa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOI semiconductor device and method of producing same wherein wa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI semiconductor device and method of producing same wherein wa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-677906