Method of producing a semiconductor device

Details Method of producing a semiconductor device Method of producing a semiconductor device

1991-12-30

1993-02-02

Wilczewski, Mary

Fishing, trapping, and vermin destroying

148 334, 148 335, 148DIG59, 437107, H01L 2120, H01L 21203, H01L 21205

Patent

active

051837781

ABSTRACT:
A semiconductor device is produced by forming a crystalline substrate of a first layer of Si and a second layer of GaAs or GaAs-containing compound formed on the first layer, wherein a Ge or Ge-containing crystalline layer is formed as an intervening layer between the second layer and the first layer.

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Dumke et al., "Heterostructure Long Lifetime Hot Electron Transistor", IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3229-3231.
Sheldon et al., "Growth and Patterning of GaAs/Ge Single Crystal Layers on Si Substrates by Molecular Beam Epitaxy", Appl. Phys. Lett., vol. 45, No. 3, Aug. 1, 1984, pp. 274-276.

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