Method for the manufacture of a pn junction with high breakdown

Details Method for the manufacture of a pn junction with high breakdown Method for the manufacture of a pn junction with high breakdown

1985-09-13

1987-06-16

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 148DIG10, 357 13, 357 14, 357 20, H01L 2974, H01L 21265

Patent

active

046727388

ABSTRACT:
A method for the manufacture of a pn junction having a high breakdown voltage at the boundary surface of a semiconductor body, utilizing a mask which has a relatively large opening for introducing a dopant therethrough into the semiconductor body, the mask having a marginal edge which extends laterally beyond the edge of the relatively large opening. In the marginal edge, the mask is provided with smaller, auxiliary openings, the openings being sized and spaced such that lesser amounts of dopant pass through the opening as the distance of the auxiliary openings from the edge of the relatively larger opening increases. Upon introducing the dopant into the semiconductor body through the mask, there is generated a doping profile which gradually approaches the boundary surface with increasing distance from the edge of the relatively large opening.

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