VLSI local interconnect structure

Details VLSI local interconnect structure VLSI local interconnect structure

1985-05-01

1989-04-11

Carroll, J.

357 231, 357 239, 357 42, 357 71, H01L 2978, H01L 2702, H01L 2348, H01L 2946

Patent

active

048210854

ABSTRACT:
A local interconnect system for VLSI integrated circuits. During self-aligned silicidation of exposed moat and gate regions in a nitrogen atmosphere, a conductive titanium nitride layer is formed overall. Normally this conductive layer is stripped to avoid shorting out devices. However, the present invention patterns this conductive layer, thereby providing a local interconnect with the sheet resistance of the order of one ohm per square. Moreover, this local interconnect level permits contacts to be misaligned with the moat boundary, since the titanium nitride local interconnect layer can be overlapped from the moat up on to the field oxide to provide a bottom contact and diffusion barrier for a contact hole which is subsequently etched through the interlevel oxide. This local interconnect level fulfills all of the functions which a buried contact layer could fulfill, and fulfills other functions as well.

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