Monolithically merged field effect transistor and bipolar juncti

Details Monolithically merged field effect transistor and bipolar juncti Monolithically merged field effect transistor and bipolar juncti

1981-07-27

1984-04-03

Munson, Gene M.

357 89, H01L 2702

Patent

active

044411170

ABSTRACT:
A semiconductor device is provided comprising a monolithically merged field-effect transistor and bipolar junction transistor. The device has a semiconductor region with a base contact and a gate electrode such that a signal applied to the base contact causes the device to function as a bipolar junction transistor, while a signal applied to the gate electrode causes the device to function as a field-effect transistor. In this manner, the mode of operation may be chosen so as to achieve the most desired operating characteristics.

REFERENCES:
patent: 3461360 (1969-08-01), Barson et al.
patent: 4089022 (1978-05-01), Asai et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4315307 (1982-02-01), Jacquart
patent: 4344081 (1982-08-01), Pao et al.

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