Semiconductor laser apparatus

Details Semiconductor laser apparatus Semiconductor laser apparatus

1986-07-23

1988-07-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

047575093

ABSTRACT:
Laser light guided by a coupled waveguide (formed by difference in refractive index between n-type and p-type AlGaAs clad layers (2) and (4) and an undoped AlGaAs active layer (3) and difference in refractive index between the p-type AlGaAs clad layers (4) and (7) and a p-type AlGaAs waveguide layer (6)) is guided only by the p-type AlGaAs waveguide layer (6) in the vicinity of end surfaces (40, 42), not to be coupled with the undoped AlGaAs active layer (3). Therefore, surface regions of the end surfaces (40, 42) reflecting the laser light are formed by the p-type AlGaAs clad layers (4, 7) and the p-type AlGaAs waveguide layer (6) being larger in forbidden bandwidth.

REFERENCES:
patent: 4185256 (1980-01-01), Scifres et al.
patent: 4506366 (1985-03-01), Chinone et al.
"A New Transverse-Mode Stabilized GaAlAs Laser with a Slab-Coupled Waveguide Grown by MOCVD", Extended Abstracts of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, pp. 153-156.

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