ESD protection of ISFET sensors

Fishing – trapping – and vermin destroying

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437 60, 437919, H01L 2170

Patent

active

054078547

ABSTRACT:
Methods, apparatus and chip fabrication techniques are described which provide electrostatic discharge (ESD) protection to ion-sensitive field effect transistor (ISFET) based devices used to selectively measure ions in a liquid. According to one aspect of the invention, an ESD protection circuit, made up of conventional protective elements, is integrated onto the same silicon chip on which the ISFET is formed, along with an interface that is in contact with the liquid being measured and which does not open up paths for D.C. leakage currents between the ISFET and the liquid. According to a preferred embodiment of the invention, a capacitor structure is used as the interface between the protection circuit and the liquid sample. Further aspects of the invention are directed to methods per se for providing ESD protection for ISFET sensors utilizing the interface means (e.g, capacitor structure) referred to hereinabove, and processes for fabricating the novel interface on a silicon wafer.

REFERENCES:
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4397714 (1983-08-01), Janata et al.
patent: 4505799 (1985-03-01), Baxter
patent: 4589970 (1986-05-01), Ligtenberg et al.
patent: 4657658 (1987-04-01), Sibbald
patent: 4732872 (1988-03-01), Komatsu
patent: 4851104 (1989-07-01), Connery et al.
patent: 4898839 (1990-02-01), Fujinuma et al.
patent: 4961833 (1990-10-01), Sakai et al.
patent: 5025298 (1991-06-01), Fey et al.
patent: 5311042 (1994-05-01), Anceau

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