Technique for fabricating complementary dielectrically isolated

Fishing – trapping – and vermin destroying

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437 78, 437 90, H01L 2906, H01L 29165

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048206539

ABSTRACT:
A method has been developed for providing tub regions with various resistivities in a dielectrically isolated (DI) structure. The starting substrate material is etched to expose the locations designated for a resistivity modification, and epitaxial material of the modified resistivity value is used to fill the exposed tubs. The remainder of the fabrication process follows conventional DI fabrication techniques. The procedure may simply be used to create a DI structure containing both n-type and p-type tube regions. The idea may also be extended, however, to providing separate tubs with, for example, n+ resistivity, n- resistivity, p- resistivity and p+ resistivity, all within the same DI structure.

REFERENCES:
patent: 4416050 (1983-11-01), Sarace
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4554059 (1985-11-01), Short et al.
patent: 4579625 (1986-04-01), Tabata et al.
patent: 4593458 (1986-06-01), Adler
patent: 4624047 (1986-11-01), Tani
Conversion of the Conductivity Mode in Silicon by Oxygen Ion Implantation and Its Application in a Novel Dielectric Isolation Technique, J. Y. Chi and R. P. Holmstrom, Appl. Phys. Lett. 40(5), Mar. 1, 1982, pp. 420-422.

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