Semiconductor apparatus having an insulating layer of varying he

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257759, 257760, 257737, 257773, 257778, H01L 2348, H01L 2352, H01L 2940

Patent

active

06097091&

ABSTRACT:
A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to form a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.

REFERENCES:
patent: 5659203 (1997-08-01), Call et al.
patent: 5790377 (1998-08-01), Schreiber et al.
patent: 5828128 (1998-10-01), Higashiguchi et al.
patent: 5859472 (1999-01-01), DiStefano et al.

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