Symmetrical multi-layer metal logic array employing single gate

Details Symmetrical multi-layer metal logic array employing single gate Symmetrical multi-layer metal logic array employing single gate

1998-05-26

2000-08-01

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

H01L 2710

Patent

active

060970421

ABSTRACT:
An integrated circuit gate array structure includes: a semiconductor substrate including a plurality of columns of semiconductor material of a first conductivity type and a plurality of columns of semiconductor material of a second conductivity type; active areas formed within the columns to which can be connected conductive material, thereby forming active regions; gate connection regions, each controlling a flow of current between a source and a drain which are formed in each of the active regions, wherein each gate connection region has single gate connection pad region; and tap regions formed outside the columns, each of the tap regions being associated with one pair of the columns, the tap region being dropped with an opposite material than their respective columns thereby allowing current and voltage characteristics of the columns to be controlled.

REFERENCES:
patent: 5384472 (1995-01-01), Yin
patent: 5397906 (1995-03-01), Kumagai
patent: 5420447 (1995-05-01), Waggoner

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