Integrated Schottky diode and transistor

Details Integrated Schottky diode and transistor Integrated Schottky diode and transistor

1988-03-28

1989-10-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 15, 437175, 437178, 437187, H01L 2956

Patent

active

048716863

ABSTRACT:
An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip.
Nested N-, P-, N- and P+ regions are formed on an N+ semiconductor substrate. A portion of the overlying dielectric is removed adjacent one of the P+ regions over the N- region and a Schottky contact formed to the N- region and an ohmic contact to the adjacent P+ region. N+ and P+ regions are desirably provided where the junctions between the N-/P- regions and the P-/N- regions intersect the surface to provide contact to the N- and P- regions respectively.
A P region extends through the upper N- region and has U-shaped arms which partially overlie an annular shaped P+ region and is located between the active region of the PNP transistor and the collector contact to serve as a Kelvin probe. The arrangement is particularly valuable where a vertical PNP device without a buried collector region is required.

REFERENCES:
patent: 3590471 (1971-07-01), Lepselter
patent: 3938243 (1976-02-01), Rosvold
patent: 3943554 (1976-03-01), Russel
patent: 4127860 (1978-12-01), Beelitz
patent: 4156246 (1979-05-01), Pedersen
patent: 4253105 (1981-02-01), Olmstead
patent: 4380021 (1983-04-01), Whatsuyama
patent: 4443808 (1984-04-01), Kihara
patent: 4586071 (1986-04-01), Tiwari

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