Schottky barrier phototransistor

Details Schottky barrier phototransistor Schottky barrier phototransistor

1973-05-29

1977-05-31

Edlow, Martin H.

357 30, 357 61, H01L 2948

Patent

active

040273199

ABSTRACT:
Disclosed is a phototransistor comprised of an indium arsenide n-type semiconductor substrate, a thin, relatively lightly doped p-type cadmium diffused region in the substrate forming a photosensitive diode junction, and a metal film in rectifying contact with the p-type diffused region to form a Schottky barrier.
The method for fabricating the transistor comprises producing the shallow cadmium diffusion, etching the surface of the diffused region to a predetermined depth to reduce the doping level and the surface oxide level, and depositing the metal film on the etched surface of the diffused region.

REFERENCES:
patent: 3280391 (1966-10-01), Bittmann
patent: 3289052 (1966-11-01), Mead
patent: 3703408 (1972-11-01), Belasco et al.
patent: 3768037 (1966-11-01), Migitaka

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