Method for forming film on semiconductor substrate by thermal CV

Details Method for forming film on semiconductor substrate by thermal CV Method for forming film on semiconductor substrate by thermal CV

1996-04-30

1998-02-03

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437233, H01L 21302

Patent

active

057144060

ABSTRACT:
A semiconductor substrate is supported on a lower electrode provided within a chamber. The semiconductor substrate is heated up to about 600.degree. to 700.degree. by radiation heat from a halogen lamp. While the pressure within the chamber is reduced to about 0.1 to 1 Torr, the lower electrode is used as a positive electrode, and an upper electrode is used as a negative electrode. In this state, a DC voltage of 20 V is applied from a DC power supply. Then, a material gas is introduced into the chamber via an introducing hole, and a polysilicon film is grown on an oxide film on the semiconductor substrate. Electricity in the oxide film increases an initial growth rate of the polysilicon film and prevents formation of pinholes in the polysilicon film.

REFERENCES:
patent: 5563092 (1996-10-01), Ohmi

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