Method for fabricating a capacitor of a semiconductor device and

Fishing – trapping – and vermin destroying

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437 52, 437201, 437919, H01L 2170

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057144028

ABSTRACT:
A capacitor structure suitable for the high integration of a semiconductor device is fabricated with a method comprising the steps of: providing a semiconductor substrate; forming a ruthenium-platinum film on the semiconductor substrate; thermally treating the ruthenium-platinum film to grow a ruthenium-platinum oxide on the ruthenium-platinum film; and forming a dielectric film and a conductive layer on the ruthenium-platinum oxide, in sequence.

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