Process for the manufacture of thin films of semiconductor mater

Fishing – trapping – and vermin destroying

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437974, H01L 21265

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active

057143951

ABSTRACT:
The process includes the following steps: implantation of ions (12) in a semi-conducting wafer (10), to create a cleavage layer of gaseous microblisters (16) in the wafer, heat treatment of the wafer, in order to cause separation of a surface layer (18) from the rest of the wafer, along the layer of microblisters. According to the invention, the implantation is carried out at a depth equal to or greater than a given minimum depth so that the thin film obtained is rigid, and so that the heat treatment can release it.

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