Method of fabricating thin film transistor array

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

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438158, 438159, M01L 2100, M01L 2184

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active

059665890

ABSTRACT:
There is provided a method of fabricating a thin film transistor array having a transparent insulating substrate, a plurality of thin film transistors formed on the substrate in a matrix, a gate bus line connected to gate electrodes of the thin film transistors, a drain bus line connected to drain electrodes of the thin film transistors, and a pixel electrode driven by the thin film transistors, the method including the steps of forming the gate electrode and the gate bus line on the transparent insulating substrate, forming a gate insulating film over the substrate, forming an operative semiconductor on the gate insulating film, forming the source electrodes, drain electrodes, and drain bus line of the thin film transistors on the gate insulating film and the operative semiconductor, forming a protection film all over the substrate, removing a portion of both the gate insulating film and the protection film, located above a terminal of the gate bus line, and also removing a portion of the protection film located above a terminal of the drain bus line, and forming the pixel electrode on the substrate. The above-mentioned method makes it possible to make a gate bus line and a drain bus line appear by only one photolithography step. Hence, the above-mentioned method needs to carry out only five photolithography steps to fabricate a thin film transistor array, whereas the conventional methods have to carry out six photolithography steps.

REFERENCES:
patent: 5811318 (1998-09-01), Kweon
patent: 5830785 (1998-11-01), Sanson et al.
patent: 5867233 (1999-02-01), Tanaka
patent: 5872021 (1999-02-01), Matsumoto et al.
patent: 5879958 (1999-03-01), Kawahata et al.
patent: 5888855 (1999-03-01), Nagashisa et al.

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