Gate circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307304, 361 10, H02H 904, H03K 3353

Patent

active

040271730

ABSTRACT:
An input gate circuit of a semiconductor integrated circuit composed of insulated gate field-effect transistors, comprises a driving transistor and a load transistor which form an inverter, a transistor which prevents the input of the integrated circuit from being opened, and resistance means to protect the transistors. A first resistance is connected in series between an input terminal and the gate of the driving transistor, while another resistance is connected between the input terminal and one end of the input opening preventing transistor whose other end is connected to a power supply terminal.

REFERENCES:
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patent: 3555374 (1971-01-01), Usuda
patent: 3588525 (1971-06-01), Hatsukano et al.
patent: 3636385 (1972-01-01), Koepp
patent: 3651340 (1972-03-01), Cliff
patent: 3673428 (1972-06-01), Athanas
patent: 3777178 (1973-12-01), Gratzmuller
patent: 3819952 (1974-06-01), Enomoto et al.
patent: 3934159 (1976-01-01), Nomiya et al.

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