Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1999-05-26
2000-08-01
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429802, 20429812, 20429816, 20429817, 20429821, C23C 1400
Patent
active
060961805
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The present invention relates to a device for cathode sputtering for producing coatings on a substrate by means of a sputtering cathode, which can be introduced into a vacuum chamber and has magnets or ring magnets, pole shoes and a target extending concentrically with the center axis of the sputtering cathode, and whose surface extends at least partially inclined with respect to the back of the target.
A device for cathode sputtering for the static coating of disk-shaped substrates by means of a plasma in a vacuum chamber with at least one opening, which can be closed from the outside by placing a sputtering cathode on it, is already known (DE 43 15 023 A1). An elastic vacuum seal ring and an annular anode are provided between the cathode and the chamber wall, which radially enclose the openings from the outside, wherein the anode has a flat contact surface on its side facing in the direction of the cathode. The known sputtering cathode consists of a disk-shaped ferromagnetic yoke and a cooling plate. A disk-shaped insulator is inserted between these two. The target to be sputtered is arranged in front of the cooling plate, while a ring magnet is inserted in a groove on the back of the cooling plate. A counter-magnetic field is generated by the ring magnet, which affects the path of the magnetic field lines. By means of this, the path of the magnetic field lines is given an approximately parallel or lens-shaped or convex form.
BRIEF SUMMARY OF THE INVENTION
In contrast thereto, it is an object of the present invention to arrange or design the target surface in such a way that the target yield is improved. This object is achieved by the features of the claims.
In achieving this object, the invention starts out from the basic idea of providing a specific target geometry which allows a longer service life. In particular, the target comprises an inclined raised edge on both the inner and outer edges of the sputtering surface in order to improve the electron enclosure.
In accordance with the invention, the object is achieved in that a target surface extending inclined with respect to the back surface of the target or at least part of this surface encloses an angle with the back surface of the target, and the target surface is located between further target surfaces also including an angle with the inclined extending target surface. Thus, the target yield can be optimized since the surface of the target takes a course being adapted to the magnetic field lines. This is also achieved in that due to the advantageous design of the target surface, the magnetic field lines take a flat course. The inclined extending surface on the target or the convex target surface causes the material to be focussed from a larger target to a smaller substrate. Due to the parallel course of the partial target surfaces, a material accumulation for the target is provided. To this end it is advantageous that the magnetic field is adapted to this target design, i.e. takes a course which is almost parallel with the target surface.
To this end it is advantageous that the target surface extending inclined with respect to the back surface of the target is located between target surfaces enclosing an angle with it, said angle having a value of more than 10.degree..
In a further development of the invention it is advantageous that the target surface extending inclined with respect to the back surface of the target is located between target surfaces enclosing an angle with it, said angle having a value between 10.degree. and 40.degree., or between 15.degree. and 40.degree., or between 20.degree. and 40.degree., and that a dynamically balanced annular groove adjoins the inner end of the inclined extending target surface.
Moreover, according to a preferred embodiment of the solution according to the present invention, the inner end of the inclined extending target surface adjoins a dynamically balanced annular groove or V-shaped annular groove having an angle between 10.degree. and 40.degree..
It is of particular im
REFERENCES:
patent: 4100055 (1978-07-01), Rainey
patent: 4282083 (1981-08-01), Kertesz et al.
patent: 4547279 (1985-10-01), Kiyota et al.
patent: 5133850 (1992-07-01), Kukla et al.
patent: 5421978 (1995-06-01), Schuhmacher et al.
patent: 5463020 (1995-10-01), Becker et al.
patent: 5490915 (1996-02-01), Bracher
patent: 5538603 (1996-07-01), Guo
patent: 5688381 (1997-11-01), Gruenenfelder et al.
patent: 5863399 (1999-01-01), Sichmann
patent: 5935397 (1999-08-01), Masterson
Nguyen Nam
Singulus Technologies AG
VerSteeg Steven H.
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