On-off current ratio improving circuit for flat-cell array

Static information storage and retrieval – Floating gate – Particular connection

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Details

36518516, 36523003, G11C 1604

Patent

active

059663278

ABSTRACT:
An on/off current ratio improving circuit for a flat-cell array which is capable of maintaining an insulation state between unit memory cells by configuring the unit memory cells by using a predetermined number of cells, disposing a metal bit line at left and right sides of the unit memory cell, disposing a ground terminal fixed to the center of the circuit, and connecting to an external ground terminal of the memory cell. The circuit includes a metal line connection unit for selectively connecting an external ground unit between left and right metal bit lines, an inner and outer cell selection unit for selecting a cell connected to the metal line connection unit in accordance with a signal transmitted to inner and outer selection lines among unit cells of a cell array, which cells are symmetrically disposed about a fixed ground terminal, left and right selection units for selecting a left cell or right cell connected between the metal line connection unit and the fixed ground terminal in accordance with a signal transmitted to the left and right selection lines among the unit cells of the cell array, and a memory unit which is disposed by the unit group having a predetermined number of cells for driving a cell of a corresponding unit group in accordance with driving of word lines.

REFERENCES:
patent: 5117389 (1992-05-01), Yiu
patent: 5517448 (1996-05-01), Liu
patent: 5600586 (1997-02-01), Lee

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