Semiconductor memory device with amorphous diffusion barrier bet

Details Semiconductor memory device with amorphous diffusion barrier bet Semiconductor memory device with amorphous diffusion barrier bet

1997-05-06

1999-10-12

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257769, 257295, H01L 27108

Patent

active

059659424

ABSTRACT:
In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode.
The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1.
The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2<X<1.0 and 0<Y<1.0.

REFERENCES:
patent: 5504041 (1996-04-01), Summerfelt
patent: 5525837 (1996-06-01), Choudhury
patent: 5576579 (1996-11-01), Agnello et al.
patent: 5633781 (1997-05-01), Saenger et al.

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