ICP reactor having a conically-shaped plasma-generating section

Details ICP reactor having a conically-shaped plasma-generating section ICP reactor having a conically-shaped plasma-generating section

1997-03-05

1999-10-12

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

059649496

ABSTRACT:
Disclosed is an inductively-coupled plasma reactor that is useful for anisotropic or isotropic etching of a substrate, or chemical vapor deposition of a material onto a substrate. The reactor has a plasma-generation chamber with a conically-shaped plasma-generating portion and coils that are arranged around the plasma-generating portion in a conical spiral. The chamber and coil may be configured to produce a highly uniform plasma potential across the entire surface of the substrate to promote uniform ion bombardment for ion enhanced processing. In addition, a conical chamber and coil configuration may be used to produce activated neutral species at varying diameters in a chamber volume for non-ion enhanced processing. Such a configuration promotes the uniform diffusion of the activated neutral species across the wafer surface.

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