Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1988-03-16
1990-01-23
Mintel, William
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 59, 357 51, 357 234, 357 231, 307310, H01L 2356
Patent
active
048961990
ABSTRACT:
A semiconductor substrate has a power region and a control region. The control region is located in the center portion of the substrate, and the power region surrounds the control region and is separated therefrom. A vertical type, MOS transistor, i.e., an active semiconductor element, is formed on the power region. An insulation film is formed on part of the control region. A polycrystalline silicon diode, which functions as a heat-sensitive element, is formed on the insulation film. A control section comprising a lateral type, MOS transistor is also formed on the control region. The lateral type, MOS transistor is connected to receive a signal form the polycrystalline silicon diode. Further, a polycrystalline silicon resistor, which determines a circuit constant, is formed on the insulation film. The MOS transistor protects the active semiconductor element in response to a signal supplied from the heat-sensitive element showing that the temperature of the semiconductor substrate has risen above a predetermined value. For example, the active semiconductor element may be disabled until the detected temperature drops below a predetermined value.
REFERENCES:
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patent: 4456919 (1984-06-01), Tomita et al.
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4780434 (1988-07-01), Tsuzuki et al.
Wrathall, "The Design of a High Power Solid State Automotive Switch in CMOS-VDMOS Technology," IEEE Power Electronics Specialists' Conference, Jun. 1985, pp. 229-233.
"Self-Thermal Protecting Power MOSFET's"; Y. Tsuzuki, M. Yamaoka, et al, Nippondenso Co., Ltd., Japan, Eighteenth Annual Power Electronics Specialists Conference, Jun. 21-26, 1987.
Tsuzuki Yukio
Yamaoka Masami
Mintel William
Nippondenso Co. Ltd.
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