Fishing – trapping – and vermin destroying
Patent
1993-05-05
1994-08-02
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 8, 324765, 324767, H01L 2100
Patent
active
053345401
ABSTRACT:
In order to enable OBIC observation of a high density silicon semiconductor device provided on a semiconductor chip whose surface is mostly covered with a metal wire, i.e., for measurement of an OBIC current, the silicon semiconductor device is irradiated with a light beam from a rear surface side thereof. The wavelength of the light beam to be used has a light penetration depth, i.e., a depth for allowing light absorption of silicon (depth allowing penetration of light required for generating a photovoltaic effect) that is larger than the thickness of the silicon chip, and is shorter than the absorption edge of silicon. For example, a YAG laser beam of 1064 nm in wavelength or an InGaAs laser beam of 980 nm in wavelength is used as the light beam.
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IEEE/IRPS, pp. 118-121, 1983, D. J. Burns, et al., "Imaging Latch-Up Sites in LSI CMOS with a Laser Photoscanner".
Failure Analysis of Multilevel Metalized LSI Using Optical Beam Induced Current, J. Mitsuhashi, S. Komori and N. Tsubouchi, LSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami City, Hyoto, 664 Japan, Oct. 1991.
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
Picardat Kevin M.
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