Integrated circuit with improved programmable read-only memory

Details Integrated circuit with improved programmable read-only memory Integrated circuit with improved programmable read-only memory

1984-06-06

1986-10-07

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

365189, G11C 700

Patent

active

046163395

ABSTRACT:
Field effect transistors having a short channel length are desirable for carrying out logic operations at a high speed. However, they are then not capable of withstanding the comparatively high programming and erasing voltage at which an (E)EPROM has to be operated. During the programming cycle the field effect transistors are kept in the current-nonconducting state, while recording the logic information obtained by the logic operations, the "fast" transistors are nevertheless capable of withstanding the comparatively high voltage.

REFERENCES:
patent: 4404659 (1983-09-01), Kihara et al.
patent: 4511811 (1985-04-01), Gupta

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