1983-11-10
1986-10-07
Davie, James W.
357 13, 357 58, H01L 2714, H01L 3100
Patent
active
046162470
ABSTRACT:
High-speed p-i-n and avalanche photodetectors (photodiodes) use a heavily doped buried layer to greatly limit minority carriers generated by incident light in the buried layers and the substrates of the devices from reaching the cathodes and thus enhances response time while substantially decreasing dark current. A p-i-n diode of this type with a 1.1 square millimeter active area can operate with 4 volt reverse bias and is capable of having edge rise and fall times in the 4 nanosecond range.
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Kaneda et al., "Low Noise Avalanche Photo Diode by Channeling of 800-keV Boron into <110> Silicon", J. Appl. Physics, 49 (12) Dec. 1978, pp. 6199-6200.
Miller et al., "Double-Mesa Thin-Film Reach-Through Silicon Avalanche Photodiode with Large Gain-Bandwidth Product", International Electron, Devices Meeting, Dec. 6-8, 1976, pp. 416-419.
Kanbe et al., "Silicon Avalanche Photodiodes with Low Multiplication Noise and High-Speed Reponse", IEEE Transaction on Electron Devices, vol. Ed-23, No. 12, Dec. 1976, pp. 1337-1343.
Chang Gee-Kung
Hartman Adrian R.
Robinson McDonald
AT&T Bell Laboratories
Davie James W.
Epps Georgia Y.
Koba Wendy W.
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