Split collector vacuum field effect transistor

Details Split collector vacuum field effect transistor Split collector vacuum field effect transistor

1989-12-22

1991-04-30

O'Shea, Sandra L.

Electric lamp and discharge devices

Electrode and shield structures

Point source cathodes

313309, 313351, 307304, H01J 2116, H03K 3353

Patent

active

050121537

ABSTRACT:
A vacuum FET is designed to perform higher level functions such as logic AND, EXCLUSIVE OR (NOR), demultiplexing, or frequency multiplication with a single device. These higher level functions are accomplished by dividing the collector of the vacuum FET into multiple segments and by providing steering electrodes just above the emitter to deflect the field emission current to the various collector segments. The collector pattern, together with the configuration of the applied signals to the device, determines the higher order function performed.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3921022 (1975-11-01), Levine
patent: 4498952 (1985-02-01), Christensen
patent: 4663559 (1987-05-01), Christensen
patent: 4721885 (1988-01-01), Brodie
Kathy Skidmore, "The Comeback of the Vacuum Tube: Will Semiconductor Versions Supplement Transistors?", Semiconductor International, Aug. 1988, pp. 15-17.
Gray et al., "A Vacuum Field Effect Transistor Using Silicon Field Emitter Arrays", IEDM, 1986, pp. 776-779.

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