Solid-state image sensor with dark-current eliminator

Details Solid-state image sensor with dark-current eliminator Solid-state image sensor with dark-current eliminator

1994-10-24

1995-05-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257230, 257232, H01L 2978, H01L 2714, H01L 3100

Patent

active

054163455

ABSTRACT:
A solid-state image sensing device includes a semiconductive substrate, an array of photosensitive cells on the substrate, and a transfer section electrically coupled with the array on the substrate, for transferring electrical carriers read from the cells along a predetermined direction. During an image sensing operation, a packet of charge carriers photoelectrically generated in the cells are prevented from continuously staying therein, by forcing the carriers to move into the transfer section, thus causing these carriers to be stored in the transfer section.

REFERENCES:
patent: 4498013 (1985-02-01), Kuroda et al.
patent: 4851890 (1989-07-01), Miyatake
patent: 4912560 (1990-03-01), Osawa et al.
IEEE International Solid-State Circuits Conference, Wednesday, Feb. 15, 1989, "Imager and sensors", pp. 96 and 97.
IEEE, 1986, "A new mos image sensor operating in a non-destructive readout mode", T. Nakamuara, et al., Semiconductor Technology Center, Japan; pp. 353-356.

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