Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-07-28
1995-05-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257245, 257247, 257229, 257436, H01L 2978, H01L 2714, H01L 3100
Patent
active
054163447
ABSTRACT:
A solid state imaging device which reduces the occurrence of crosstalk between a plurality of picture elements arranged in a linear or matrix form. The solid state imaging device includes a plurality of photosensitive cells formed on a first principal surface of a semiconductor substrate, a transfer electrode formed in a gap area among the cells on the first principal surface to read out charges produced in the cells, a drive metal wiring formed on the transfer electrode within the gap area, a first insulating film covering the cells with a predetermined thickness, and a plurality of metal reflecting films formed on the first insulating film in such a manner that the whole surface of each of the metal reflecting films forms a reflecting surface substantially parallel to a surface of each of the cells on the side of the first principal surface whereby light passed through the photosensitive cells from a side opposite to the first principal surface is reflected back to each of the photosensitive cells.
Akagawa Keiichi
Ishizuya Tohru
Shoda Masahiro
Jackson Jerome
Monin, Jr. Donald L.
Nikon Corporation
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