Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-02-25
1995-05-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 85, 257 97, 359248, 372 50, H01L 29205, H01L 3106, H01L 3300
Patent
active
054163382
ABSTRACT:
An object of the invention to vary a light absorption coefficient within wider limits in a light absorption control semiconductor device. The device includes at least three quantum wells Q1, Q2, Q3. The width of the respective quantum wells and barriers is set such that wave functions of electrons in the respective quantum wells interact in a resonance state where the quantized energy levels in either one of conduction and valence bands are matched. In addition, the width and material of the respective quantum wells are set so that one of the bands is brought into the resonance state where the quantized energy levels at the respective quantum wells are matched in a state where no electric field is applied or a state where a suitable electric field is applied in a direction perpendicular to the junctions. The light absorption is changed by controlling components of the electric field perpendicular to the junctions. Since only one band is brought into the resonance state, the light absorption coefficient can be made greater.
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English Abstract of JP60-68330 Apr. 1985.
Ito Hiroshi
Suzuki Takamasa
Jackson Jerome
Nippondenso Co. Ltd.
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