Method of producing Bi-CMOS transistors

Details Method of producing Bi-CMOS transistors Method of producing Bi-CMOS transistors

1993-09-28

1995-05-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 32, 437 59, H01L 21265, H01L 2170

Patent

active

054160316

ABSTRACT:
In production of a Bi-CMOS semiconductor device, when forming a lateral PNP transistor in a bipolar section, an oxide film is deposited on this base area to prevent etching damages such as those in forming an LDD spacer for a MOS section, thus degradation of the lateral PNP bipolar transistor and drop of yield in production thereof being prevented and a high performance (low cost) Bi-CMOS LSI being realized.

REFERENCES:
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4859630 (1989-08-01), Josquin
patent: 4975381 (1990-12-01), Taka et al.
patent: 5089429 (1992-02-01), Hsu
patent: 5101257 (1992-03-01), Hayden et al.
patent: 5244533 (1993-09-01), Kimura et al.

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